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SCTH40N120G2V7AG数据手册ST中文资料规格书
SCTH40N120G2V7AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Source sensing pin for increased efficiency
技术参数
- 制造商编号
：SCTH40N120G2V7AG
- 生产厂家
：ST
- Package
：H2PAK-7
- Grade
：Automotive
- VDSS_nom(V)
：1200
- Drain Current (Dc)_max(A)
：33
- RDS(on)_max(@ VGS=20V)(Ω)
：0.105
- PTOT_max(W)
：250
- Qg_typ(nC)
：63
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法半导体 |
23+ |
H2PAK-7 |
12700 |
买原装认准中赛美 |
询价 | ||
ST(意法半导体) |
20+ |
H2PAK-7 |
1000 |
询价 | |||
ST/意法半导体 |
22+ |
H2PAK-7 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
21+ |
H2PAK-7 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
21+ |
H2PAK-7 |
8860 |
只做原装,质量保证 |
询价 | ||
24+ |
32000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||||
ST |
23+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 |
