首页>SCTH100N120G2-AG>规格书详情
SCTH100N120G2-AG中文资料Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an H2PAK-7 package数据手册ST规格书
SCTH100N120G2-AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• AEC-Q101 qualified
• High speed switching performance
• Very fast and robust intrinsic body diode
• Low capacitance
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ST/意法 |
24+ |
H2PAK-7 |
60000 |
全新原装现货 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST/TESLA |
23+ |
DIP-7 |
7000 |
询价 | |||
STMicroelectronics |
23+ |
H2PAK-7 |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
ST(意法半导体) |
24+ |
H2PAK7 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST |
两年内 |
NA |
10 |
实单价格可谈 |
询价 | ||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
ST(意法半导体) |
20+ |
H2PAK-7 |
1000 |
询价 |
