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SCTHC250N120G3AG数据手册ST中文资料规格书
SCTHC250N120G3AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency
• Low thermal resistance multi sintering package
• 7.3 mm minimum creepage (including 0.6 mm particles)
• 1020 Vrms PD2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
PowerVDFN8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法 |
24+ |
NA/ |
1661 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法 |
24+ |
NA |
14280 |
强势渠道订货 7-10天 |
询价 | ||
ST/意法 |
21+ |
SMD |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
ST |
两年内 |
NA |
30 |
实单价格可谈 |
询价 | ||
ST(意法半导体) |
20+ |
PowerVDFN-8 |
3000 |
询价 | |||
ST |
2018+ |
SMD |
6528 |
承若只做进口原装正品假一赔十! |
询价 | ||
ST/意法 |
23+ |
PowerFLAT8x8HV |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST |
23+ |
QFP |
16900 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 |
