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SCTHC250N120G3AG中文资料Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package数据手册ST规格书
SCTHC250N120G3AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency
• Low thermal resistance multi sintering package
• 7.3 mm minimum creepage (including 0.6 mm particles)
• 1020 Vrms PD2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ST |
23+ |
QFP |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
ST |
24+ |
QFP |
200000 |
原装进口正口,支持样品 |
询价 | ||
ST/意法 |
24+ |
QFP |
60000 |
全新原装现货 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
smal |
24+ |
SMD |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
ST/意法 |
24+ |
NA |
14280 |
强势渠道订货 7-10天 |
询价 | ||
ST |
22+ |
QFP |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
STMicroelectronics |
23+ |
PowerFLAT-5 |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
ST |
24+ |
QFP |
16900 |
支持样品,原装现货,提供技术支持! |
询价 |
