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SCTHS250N65G3数据手册ST中文资料规格书
SCTHS250N65G3规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
QFP |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST/意法 |
21+ |
SMD |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
ST(意法半导体) |
24+ |
PowerVDFN8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法 |
25+ |
SMD |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
21+ |
SMD |
2 |
原装现货假一赔十 |
询价 | ||
ST |
两年内 |
NA |
30 |
实单价格可谈 |
询价 | ||
ST |
25+ |
QFP |
16900 |
原装，请咨询 |
询价 | ||
ST/意法 |
24+ |
NA/ |
1661 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST(意法半导体) |
20+ |
PowerVDFN-8 |
3000 |
询价 | |||
ST |
2018+ |
SMD |
6528 |
承若只做进口原装正品假一赔十! |
询价 |
