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FGA30N120FTD

1200V,30ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGA30N120FTDTU

1200V,30ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N120FTD

Fieldstoptrenchtechnology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N120FTDTU

Fieldstoptrenchtechnology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGW30N120H

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFUJI CORPORATION

株式会社FUJI

FGW30N120HD

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFUJI CORPORATION

株式会社FUJI

G30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

GW30N120KD

30A-1200V-shortcircuitruggedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GWA30N120KD

30A,1200VshortcircuitruggedIGBTwithUltrafastdiode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH™p

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG30N120CN

30A,1200VN-ChannelIGBT

Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HIH30N120TF

1200VFieldStopTrenchIGBT

SEMIHOW

SemiHow Co.,Ltd.

IHW30N120R

HighSpeed2-Technology

•Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IHW30N120R

IGBTwithmonolithicbodydiodeforsoftswitchingApplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IXDH30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Integrated Circuits Division

IXDH30N120

HighVoltageIGBTwithoptionalDiode

IXYS

IXYS Integrated Circuits Division

IXDR30N120

HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage

HighVoltageIGBTwithoptionalDiodeISOPLUS™package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features •NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability -

IXYS

IXYS Integrated Circuits Division

IXDT30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Integrated Circuits Division

IXDT30N120

HighVoltageIGBTwithoptionalDiode

IXYS

IXYS Integrated Circuits Division

供应商型号品牌批号封装库存备注价格
ST
23+
H2PAK-2
100000
全新原装
询价
STMicroelectronics
24+
H2Pak-2
30000
晶体管-分立半导体产品-原装正品
询价
STMicroelectronics
21+
6-TSSOP,SC-88,SOT-363
10000
专业分立半导体,原装渠道正品现货
询价
ST/意法
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ST
23+
NA
16900
支持样品,原装现货,提供技术支持!
询价
ST
23+
原厂原封
16900
正规渠道,只有原装!
询价
STMicroelectronics
23+
H2PAK-2
3652
原厂正品现货供应SIC全系列
询价
ST
原厂原封
36900
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST/意法
30
原装现货支持BOM配单服务
询价
ST
22+
原厂原封
16900
支持样品 原装现货 提供技术支持!
询价
更多SCT30N120H供应商 更新时间2024-5-16 14:52:00