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SCT070W120G3-4中文资料Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package数据手册ST规格书
SCT070W120G3-4规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• Very fast and robust intrinsic body diode
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AIM |
24+ |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
24+ |
12 |
询价 | |||||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
TLC(竞沃) |
2447 |
SMD |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
PANDUIT |
25+ |
连接器 |
93 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 | ||
TLC(竞沃) |
24+ |
con |
10000 |
查现货到京北通宇商城 |
询价 | ||
TLC竞沃 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
