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SCT055TO65G3数据手册ST中文资料规格书
SCT055TO65G3规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• Very fast and robust intrinsic body diode
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AUK |
25+ |
TO220F |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
24+ |
12 |
询价 | |||||
ST/意法 |
22+ |
TO-263-7 |
25800 |
原装正品支持实单 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
9999 |
询价 | |||
ST(意法) |
23+ |
10000 |
只做全新原装,实单来 |
询价 | |||
ST |
25+ |
30000 |
原装现货,可追溯原厂渠道 |
询价 | |||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 | ||
ST |
130 |
只做正品 |
询价 |
