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SCT070HU120G3AG中文资料Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package数据手册ST规格书
SCT070HU120G3AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AIM |
24+ |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST(意法) |
24+ |
N/A |
7198 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
24+ |
12 |
询价 | |||||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
TLC(竞沃) |
2447 |
SMD |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST(意法) |
23+ |
10000 |
只做全新原装,实单来 |
询价 | |||
ST |
22+ |
BGA |
1000 |
原装正品碳化硅 |
询价 | ||
ST(意法) |
2405+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
询价 |
