TISP8201HDMR-S

GR-1089-COREDualSupplyVoltage

TISP8201M

COMPLEMENTARYBUFFERED-GATESCRSFORDUALPOLARITYSLICOVERVOLTAGEPROTECTION

TISP8201MDR

COMPLEMENTARYBUFFERED-GATESCRSFORDUALPOLARITYSLICOVERVOLTAGEPROTECTION

TISP8201MDR-S

COMPLEMENTARYBUFFERED-GATESCRSFORDUALPOLARITYSLICOVERVOLTAGEPROTECTION

TLE8201R

DoorModulePowerIC

TPC8201

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs ●Lowdrain−sourceONresistance:RDS(ON)=37mΩ(typ.) ●Highforwardtransferadmittance:|Yfs|=6S(typ.) ●Lowleakagecurrent:IDSS=10µA(max)(VDS=30V) ●Enhancement−mode:Vth=0.8~2.0V(VDS=

TPCF8201

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCF8201

DualN-Channel20V(D-S)MOSFET

TPCF8201

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

TPCF8201

FieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=38mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=5.4S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=20V) •Enhancement-mode:Vth=0.5to1.2V(VDS=10V,ID=200μA)