TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs ● Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 6 S (typ.) ● Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) ● Enhancement−mode : Vth = 0.8~2.0 V (VDS =

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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Dual N-Channel 20 V (D-S) MOSFET

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