SCR PROTECTOR - BUFFERED N-GATE PROG. PROT.

Bourns

伯恩斯

COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION

文件：329.38 Kbytes 页数：13 Pages

BOURNS

伯恩斯

Package：8-SOIC（0.154"，3.90mm 宽）；包装：带盒（TB） 类别：电路保护 TVS - 晶闸管 描述：THYRISTOR 120V 45A 8SOIC

Bourns Inc.

Door Module Power IC

文件：598.93 Kbytes 页数：45 Pages

INFINEON

英飞凌

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs ● Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 6 S (typ.) ● Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) ● Enhancement−mode : Vth = 0.8~2.0 V (VDS =

文件：344.35 Kbytes 页数：7 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)

文件：187.23 Kbytes 页数：7 Pages

TOSHIBA

东芝