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型号：2SA1204；Package：SOT-89；Silicon Planar Epitaxial Transistor

FEATURES ●Suitableforoutputstageof1wattsAmplifier ●Suitableflatpackage ●HighDCcurrentgain ●PC=1.0to2.0W(mountedonceramicsubstrate) ●Complementaryto2SC2884

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型号：2SA1204；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Complementaryto2SC2884 SmallFlatPackage AudioFrequencyAmplifierApplication HighDCCurrentGain

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型号：2SA1664；Package：SOT-89；Plastic-Encapsulated Transistor

FEATURES ●Complementaryto2SC2884

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型号：2SA1664；Package：SOT-89；Plastic-Encapsulated Transistor

FEATURES Complementaryto2SC2884

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型号：DESD35VF1BL-7B；Package：X1-DFN1006-2；35V ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprintArea(1.08mm*0.68mmMax)SuitableforCompactPortableElectronics ProvidesESDProtectionperIEC61000-4-2Standard:Air±14kV,Contact±14kV 1ChannelofESDProtection LowChannelInputCapacitance Totally

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型号：KTA1664；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ComplementarytoKTC4376 SmallFlatPackage HighCurrentApplication

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型号：KTA1664-O；Package：SOT-89；PNP Transistors

■Features ●1W(MountedonCeramicSubstrate) ●SmallFlatPackage ●ComlementarytoKTC4376

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型号：KTC3879；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES •Highpowergain. APPLICATIONS •Highfrequencyapplication. •HF,VHFbandamplifierappilication.

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型号：YFW3400；Package：SOT-23；N-Channel Enhancement MOSFET

Features ●VDS(V)=30V ●ID=5.8A(VGS=10V) ●RDS(ON)

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型号：2SA1664；Package：SOT-89；Plastic-Encapsulated Transistor