丝印：RO1B；Package：SOT-23；DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

文件：768.83 Kbytes 页数：25 Pages

TI

德州仪器

丝印：RO1B；Package：SOT-23；DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

文件：768.83 Kbytes 页数：25 Pages

TI

德州仪器

丝印：RO1B；Package：SOT-23；DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

文件：768.83 Kbytes 页数：25 Pages

TI

德州仪器

丝印：RO1B；Package：SOT-23；DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

文件：768.83 Kbytes 页数：25 Pages

TI

德州仪器