Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1001~RN1006

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NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier

Features • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz • High Transition Frequency fT = 20 GHz typ. • High Collector to Emitter Voltage

文件：247.17 Kbytes 页数：27 Pages

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瑞萨

NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier

Features • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz • High Transition Frequency fT = 20 GHz typ. • High Collector to Emitter Voltage

文件：247.17 Kbytes 页数：27 Pages

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Silicon N Channel MOS FET Power Switching

文件：124.78 Kbytes 页数：8 Pages

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