NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier

Features • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz • High Transition Frequency fT = 20 GHz typ. • High Collector to Emitter Voltage

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NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier

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Silicon N Channel MOS FET Power Switching

文件：124.78 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET Power Switching

文件：113.03 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET Power Switching

文件：124.78 Kbytes 页数：8 Pages

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