TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Muting And Switching Applications. ● High emitter-base voltage: VEBO = 25V (min) ● High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) ● Low on resistance: RON = 1Ω (typ.) (IB = 5mA) ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and

文件：396.05 Kbytes 页数：9 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications

文件：697.14 Kbytes 页数：9 Pages

TOSHIBA

东芝

Bias resistor built-in transistor (BRT)

Application Scope：Muting\nPolarity：NPN\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Available Collector Current IC 0.3 A \nCollector-emitter voltage VCEO 20 V ;

Toshiba

东芝

SMD Buzzer / Transducer

文件：80.65 Kbytes 页数：1 Pages

etc2List of Unclassifed Manufacturers

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General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=180mΩ(typ.) • Input Capacitance Ciss=490pF(typ.) • 4V drive • Halogen free compliance

文件：81.97 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Power MOSFET 100V, 9A, 225m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=180mΩ(typ.) • Input Capacitance Ciss=490pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：418.66 Kbytes 页数：9 Pages

ONSEMI

安森美半导体