N-Channel Power MOSFET 100V, 9A, 225m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=180mΩ(typ.) • Input Capacitance Ciss=490pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：418.66 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=180mΩ(typ.) • Input Capacitance Ciss=490pF(typ.) • 4V drive • Halogen free compliance

文件：81.97 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Power MOSFET 100V, 9A, 225m, Single TP/TP-FA

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 225mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：275.97 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 225mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：285.8 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：2.01903 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel 100-V (D-S) MOSFET

文件：1.05335 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 100 V (D-S) MOSFET

文件：1.00916 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 100-V (D-S) MOSFET

文件：1.05343 Mbytes 页数：9 Pages

VBSEMI

微碧半导体