RN1444

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

MutingAndSwitchingApplications. ●Highemitter-basevoltage:VEBO=25V(min) ●HighreversehFE:reversehFE=150(typ.)(VCE=−2V,IC=−4mA) ●Lowonresistance:RON=1Ω(typ.)(IB=5mA) ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsand

RN1444

Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications

RN1444ATE85LF

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 20V 0.3A SMINI

Toshiba Semiconductor and Storage

SD1444

SILICONNPNRFPOWERTRANSISTOR

DESCRIPTION: TheASISD1444isdesignedforlargesignalpoweramplifierapplicationsoperatinginthe250-512MHzrange. FEATURES: •CommonEmitter •POUT=4.0Watts •12.5Volts

SD1444

RF&MICROWAVETRANSISTORS450-512MHzCLASSCMOBILEAPPLICATIONS

DESCRIPTION: TheSD1444isa12.5VepitaxialsiliconNPNplanartransistordesignedprimarilyforUHFcommunications.ThisdeviceispackagedinagroundedemitterTO-39packageforincreasedpowergainandoptimumheatdissipation. Features ·470MHz ·12.5VOLTS ·POUT=4.0WAT

SD1444

RF&MICROWAVETRANSISTORS450-512MHzCLASSC,MOBILEAPPLICATIONS

RF&MICROWAVETRANSISTORS450-512MHzCLASSCMOBILEAPPLICATIONS

TA1444A

SAWFilter1400MHz

TA1444A

SAWFilter1400.0MHz

TA1444B

SAWFilter1400MHz

TZ1444A

CrystalUnitSMD3.2x2.512.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan