TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1107~RN1109

文件：177.71 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1109\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC -0.1 A \nCollector-emitter voltage VCEO -50 V ;

Toshiba

东芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Extra small package (CST3) is applicable for extra high density fabrication. • Incorporating a bias resistor into a transistor reduces parts count. • Reducing the parts count enable the manufacture of ever mor

文件：150.69 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：YJ；Package：2-2HA1A；Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1107F~RN1109F

文件：217.25 Kbytes 页数：5 Pages

TOSHIBA

东芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● Ultra-small package, suited to very high density mounting ● Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering

文件：200.7 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1109CT\nRoHS Compatible Product(s) (#)：Available\n Collector Current IC -0.05 A \nCollector-emitter voltage VCEO -20 V \n;

Toshiba

东芝

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1109MFV\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC -0.1 A \nCollector-emitter voltage VCEO -50 V ;

Toshiba

东芝

Package：SC-75，SOT-416；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：AUTO AEC-Q TR PNP Q1BSR=47KOHM,

Toshiba Semiconductor and Storage

Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V 0.08A CST3

Toshiba Semiconductor and Storage

Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 20V 0.05A CST3

Toshiba Semiconductor and Storage