RM820K

R. F. Molded Chokes

[OhmiteMfg.Co.]

RM821K

R. F. Molded Chokes

[OhmiteMfg.Co.]

RM8233D23

Marking：8233；Package：DFN2X3-6L；Dual N-Channel Enhancement Mode MOSFET

Features Surface-mountedpackage Advancedtrenchcelldesign Extremelylowthresholdvoltage ESD:2KV BV≧20VPtot≦16WId≦15A RDS(ON)≦5.5mΩ@VGS=4.5V RDS(ON)≦5.8mΩ@VGS=3.9V RDS(ON)≦8.5mΩ@VGS=2.5V

RM830

N-CHANNEL MOSFET in a TO-220 Plastic Package.

Features Lowgatecharge,lowcrss,fastswitching.

RM85N100DF

Marking：85N10；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Feature 100V,85A Rds(ON)

RM86N150DF

Marking：86NF；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeature VDS=150V,ID=86A RDS(ON)

RM8810

Marking：RM8810；Package：SOT23-6；N-channel Double MOSFET in a SOT23-6 Plastic Package. It is ESD protested.

Features advancedtrenchtechnologytoprovideexcellentRDS(on),lowgatecharge. VDSS=20VVGSS=±12VID=7A RDS(ON)=16m(typ.)@VGS=4.5V RDS(ON)=19m(typ.)@VGS=2.5V

RM8A5P60S8

60V P-Channel MOSFETs

Features -60V,-8.5A,RDS(ON)=30mΩ@VGS=-10V Fastswitching GreenDeviceAvailable Suitfor-4.5VGateDriveApplications

RM8N650DF

Marking：8N650；Package：DFNSX6-8L；N-Channel Super Junction Power MOSFET III

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses Smallpackage UltraLowGateChargecauselowerdrivingrequirements 100%AvalancheTested ROHScompliant

RM8N650HD

Marking：8N650；Package：TO-263；N-Channel Super Junction Power MOSFET II

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses Smallpackage UltraLowGateChargecauselowerdrivingrequirements 100%AvalancheTested ROHScompliant