RM8810

Marking：RM8810；Package：SOT23-6；N-channel Double MOSFET in a SOT23-6 Plastic Package. It is ESD protested.

Features advancedtrenchtechnologytoprovideexcellentRDS(on),lowgatecharge. VDSS=20VVGSS=±12VID=7A RDS(ON)=16m(typ.)@VGS=4.5V RDS(ON)=19m(typ.)@VGS=2.5V

S8810MG

InfraredLaserDiode

SGT8810

N-ChannelEnhancementModePowerMos.FET

SI8810EDB

N-Channel20V(D-S)MOSFET

SK8810MF

N-channelDoubleMOSFETinaSOT23-6PlasticPackage.ItisESDprotested.

SMC8810AW-TRG

DualN-Channel25-V(D-S)MOSFET

SMS8810

N-ChannelEnhancementModePowerMOSFET

SPB-8810ALG

4.25Gbps1-FiberSMLCSFPTransceiver

SPB-8810ALG

1310nmTX/1490nmRX,3.3V/4.25Gbps1-FiberSMLCSFPTransceiver

SPB-8810ALWG

4.25GbpsDigitalDiagnostic1-FiberSMLCSFPTransceiver