丝印：RM8810；Package：SOT23-6；N-channel Double MOSFET in a SOT23-6 Plastic Package. It is ESD protested.

Features advanced trench technology to provide excellent RDS(on), low gate charge. VDSS=20V VGSS=±12V ID=7A RDS(ON)=16m(typ.)@VGS=4.5V RDS(ON)=19m(typ.)@VGS=2.5V

文件：484.47 Kbytes 页数：10 Pages

RECTRON

丽正国际

丝印：RM8810；Package：SOT23-6；N-channel Double MOSFET in a SOT23-6 Plastic Package. It is ESD protested.

Features advanced trench technology to provide excellent RDS(on), low gate charge. VDSS=20V VGSS=±12V ID=7A RDS(ON)=16m(typ.)@VGS=4.5V RDS(ON)=19m(typ.)@VGS=2.5V

文件：484.47 Kbytes 页数：10 Pages

RECTRON

丽正国际