丝印：RMA；Package：DO-214AC；Surface Mount Transient Voltage Suppressors

Features ● Glass passivated chip ● 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle):0.01 % ● High reliability application and automotive grade ● AEC Q101 qualified ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Ver

文件：1.32281 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：RMA；Package：DO-214AC；10 To 85V 400W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 400W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01% High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response ti

文件：2.87185 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：RMA；Package：SMA；Surface Mount Transient Voltage Suppressors

文件：348.57 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：K72；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

General Features VDS =50V,ID =0.35A RDS(ON) 2KV

文件：587.28 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：72；Package：DFN1006；N-Channel Trench MOSFET

General Features VDS = 60V,ID = 0.35A RDS(ON)

文件：414.37 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：AMMOPAK；Package：TO-92；N-Channel MOSFET 600V, 0.4 A, 8.5Q

Features Vds = 600V id=04A @Vgs=10V Rds(on)

文件：310.41 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：1606；Package：DFN1006-3；N-Channel Trench MOSFET

General Features VDS = 20V,ID = 0.7A RDS(ON)

文件：405.06 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：1605；Package：DFN1006-3；P-Channel Trench MOSFET

General Features VDS = -20V,ID = -0.7A RDS(ON)

文件：408.77 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：0101；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

General Features VDS =20V,ID =0.87A RDS(ON)

文件：677.99 Kbytes 页数：7 Pages

RECTRON

丽正国际

RMA SERIES

FEATURES •5A,10A swutching capabilities. •Subminiature,standard PC layout. •Sealed&Unsealed types available.

文件：507.69 Kbytes 页数：2 Pages

RAYEX

瑞镒电机