丝印：8N650；Package：DFNSX6-8L；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：423.06 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：8N650；Package：TO-263；N-Channel Super Junction Power MOSFET II

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：809.35 Kbytes 页数：10 Pages

RECTRON

丽正国际

丝印：8N650；Package：TO-251；N-Channel Super Junction Power MOSFET II

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：730.26 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：8N650；Package：TO-252；N-Channel Super Junction Power MOSFET II

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：730.26 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：8N650；Package：TO-220；N-Channel Super Junction Power MOSFET II

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：809.35 Kbytes 页数：10 Pages

RECTRON

丽正国际

丝印：8N650；Package：TO-220F；N-Channel Super Junction Power MOSFET II

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：809.35 Kbytes 页数：10 Pages

RECTRON

丽正国际