RM CORES

文件：59.89 Kbytes 页数：2 Pages

YUXIANG

丝印：6A2N25；Package：TO-252-2L；N-Channel Mode Power MOSFET

Features VDS =250V,ID =6.2A RDS(ON) =430mΩ (typical) @ VGS=10V New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause 100% Avalanche Tested ROHS compliant Halogen-free

文件：275.96 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：6A5N30；Package：SOT-23-6；N-Channel Enhancement Mode Power MOSFET

General Features VDS =32V,ID =6.5A RDS(ON)

文件：335.97 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：6A5P30；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -30V,ID = -6.5A RDS(ON)

文件：256.95 Kbytes 页数：6 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

MOSFET

Rectron

丽正国际

MOSFET

Rectron

丽正国际