FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE

• IDC DC current .................................. 25A • VRRM Repetitive peak reverse voltage .............. 1200V • trr Reverse recovery time ............. 0.3µs • ONE ARM • Non-Insulated Type APPLICATION For snubber circuit (IPM or IGBT module)

文件：50.53 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

丝印：25N100；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =100V,ID =25A RDS(ON) 25mΩ @ VGS=10V RDS(ON) 38mΩ @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation

文件：731.45 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25P150；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

General Features Vps =-150V,Ip =-25A Rd(on)

文件：647.66 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25P06Q；Package：PDFN3X3；P-Channel Enhancement Mosfet

Feature -60V,25A Rds (on)

文件：592.99 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25P06Q；Package：PDFN3X3；P-Channel Enhancement Mosfet

Feature 60V-25A Rds(on)

文件：692.38 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25P60；Package：TO-252；P-Channel Power MOSFET

General Features Vps =-60V,Ip =-25A Rds(on)

文件：1.14507 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：25P60；Package：TO-252；P-Channel Power MOSFET

General Features Vps =-60V,Ip =-25A Rds(on)

文件：1.45375 Mbytes 页数：7 Pages

RECTRON

丽正国际

Three-Phase Diode Bridge Module (15 Amperes/1600 Volts)

Description: Powerex Three-Phase Diode Bridge Modules are designed for use in applications requiring rectification of three-phase AC lines into DC voltage. Each module consists of six diodes and the interconnect required to form a complete three phase bridge circuit. Each diode is electrically in

文件：34.56 Kbytes 页数：2 Pages

POWEREX

Three-Phase Diode Bridge

Description: Mitsubishi Three-Phase Diode Bridge Modules are designed for use in applications requiring rectifi cation of three-phase AC lines into DC voltage. Each module consists of six diodes and the interconnect required to form a complete three phase bridge circuit. Each diode is electr

文件：27.2 Kbytes 页数：2 Pages

Mitsubishi

三菱电机

Avalanche Diodes

文件：12.85 Kbytes 页数：1 Pages

Sanken

三垦