丝印：25N100；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =100V,ID =25A RDS(ON) 25mΩ @ VGS=10V RDS(ON) 38mΩ @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation

文件：731.45 Kbytes 页数：7 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

N-Channel Enhancement Mode Power MOSFET

Feature 100V,25A Rds (on)

文件：1.71238 Mbytes 页数：7 Pages

RECTRON

丽正国际

N-Channel Enhancement Mode MOSFET

文件：285.52 Kbytes 页数：4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件：241.07 Kbytes 页数：4 Pages

DACO

罡境电子

Low V High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

文件：110.94 Kbytes 页数：4 Pages

IXYS

艾赛斯