Low V High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

文件：110.94 Kbytes 页数：4 Pages

IXYS

艾赛斯

Low VCE(sat), High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

文件：106.55 Kbytes 页数：4 Pages

IXYS

艾赛斯

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1000V 50A 200W TO247AD

IXYS

艾赛斯

Low VCE(sat), High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

文件：106.55 Kbytes 页数：4 Pages

IXYS

艾赛斯

Low V High speed IGBT

Features ● International standard packages ● 2nd generation HDMOSTM process ● Low VCE(sat) - for low on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity ● Voltage rating guaranteed at high temperature (125°C) Applications ● AC motor s

文件：110.94 Kbytes 页数：4 Pages

IXYS

艾赛斯

High speed IGBT with Diode

Features ● International standard package JEDEC TO-247 AD ● IGBT and anti-parallel FRED in one package ● 2nd generation HDMOSTM process ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on - drive simplicity ● Fast Recovery Epitaxial Diode (FRED) - soft reco

文件：315.17 Kbytes 页数：6 Pages

IXYS

艾赛斯

High speed IGBT with Diode

Features ● International standard package JEDEC TO-247 AD ● IGBT and anti-parallel FRED in one package ● 2nd generation HDMOSTM process ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on - drive simplicity ● Fast Recovery Epitaxial Diode (FRED) - soft reco

文件：315.17 Kbytes 页数：6 Pages

IXYS

艾赛斯

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特