| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelPowerFieldEffectTransistor Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. •Built–InFreeWheelingDiode •Built–InGateProtecti | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. •Built–InFreeWheelingDiode •Built–InGateProtection | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
POWERLUXIGBT ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. •Built–InFreeWheelingDiode •Built–InGateProtectionZenerDiode •IndustryStandardPackage(SOT223) •HighSpeedEoff:Typic | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
立锜 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
DBLECTRO |
23+ |
原厂原包 |
29960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
TA-I TECH |
1042 |
5000 |
公司优势库存 热卖中! |
询价 | |||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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