Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protection

文件：138.73 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protecti

文件：135.89 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

文件：138.49 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

POWERLUX IGBT

This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protection Zener Diode • Industry Standard Package (SOT223) • High Speed Eoff: Typic

文件：135.03 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

N-Ch Enhancement Mode Power MOSFET

文件：284.47 Kbytes 页数：3 Pages

SECOS

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