RQG1001UPAQF

NPNSiliconGermaniumTransistorHighFrequencyLowNoiseAmplifier

Features •IdealforLNAapplications.e.g.Tuner,WirelessLAN,Cordlessphoneandetc. •Highgainandlownoise. MSG=25dBtyp.,NF=0.65dBtyp.atVCE=2V,IC=5mA,f=0.9GHz MSG=22dBtyp.,NF=0.75dBtyp.atVCE=2V,IC=5mA,f=1.8GHz MSG=21dBtyp.,N

RQG1001UP-TL-E

NPNSiliconGermaniumTransistorHighFrequencyLowNoiseAmplifier

Features •IdealforLNAapplications.e.g.Tuner,WirelessLAN,Cordlessphoneandetc. •Highgainandlownoise. MSG=25dBtyp.,NF=0.65dBtyp.atVCE=2V,IC=5mA,f=0.9GHz MSG=22dBtyp.,NF=0.75dBtyp.atVCE=2V,IC=5mA,f=1.8GHz MSG=21dBtyp.,N

RQL1001JLAQH

SiGeMMICHighFrequencyLowNoiseAmplifier

RQL1001JLAQH

SiGeMMICHighFrequencyLowNoiseAmplifier

RQL1001JLTL-E

SiGeMMICHighFrequencyLowNoiseAmplifier

RQL1001JLTL-E

SiGeMMICHighFrequencyLowNoiseAmplifier

RS1001

10AmpSinglePhaseBridgeRectifier50to1000Volts

Features •LowForwardVoltageDrop •IdealForPrinterCircuitBoards •HighCurrentCapabilityandHighReliability •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSCompliant(NOTE1)(PSuffixdesignatesRoHSCompliant.Seeorderinginforma

RS1001

SINGLEPHASESILICONBRIDGERECTIFIERS

FEATURES ◾Idealforprintedcircuitboard ◾Realiablelowcostconstructionutilizingmoldedplastictechnique ◾PlasticmaterialhasunderwriterslaboratoryFlammibilityClassification94V-0 ◾Surgeoverloadrating:200amperespeak ◾Mountingposition:Any ◾MountingTorgue:5In.lb.max

RS1001

SINGLE-PHASEBRIDGERECTIFIER

VOLTAGERANGE50to1000Volts CURRENT10.0Amperes FEATURES Lowcost ThisseriesisULrecognizedundercomponentindex,filenumberE127707 Highforwardsurgecurrentcapability Idealforprintedcircuitboard Hightemperaturesolderingguaranteed: 260℃/1

RS1001

10Ampsinglephasebridgerectifier50to1000volts

Features •LowLeakage •LowForwardVoltage •AnyMountingPosition •SilverPlatedCopperLeads