Silicon N Channel Power MOS FET Power Switching

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100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching

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100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching

文件：117.96 Kbytes 页数：7 Pages

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100V, 4A, 165m??max. Silicon N Channel Power MOS FET Power Switching

文件：117.96 Kbytes 页数：7 Pages

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100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching

文件：117.96 Kbytes 页数：7 Pages

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Nch Single Power Mosfet 100V 4A 165Mohm HWSON-8

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • High speed switching\n• Capable of 4.5 V gate drive\n• Low drive current\n• High density mounting\n• Low on-resistance RDS(on) = 125 mΩ typ. (at VGS = 10 V)\n• Pb-free\n• Halogen-free\n文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档 2022年4月25日Attention of Handling Semiconductor DevicesPD;

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