isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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N-Channel MOSFET 100 V, 80 A, 5.5 mΩ

Features • High speed switching • Low drive current • Low on-resistance RDS(on) = 4.4 mΩ typ. (at VGS = 10 V) • Package TO-220FPA • Quality Grade : Standard

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N-Channel MOS FET 100 V, 80 A, 5.5 m

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N-Channel MOS FET 100 V, 80 A, 5.5 m?

文件：88.42 Kbytes 页数：7 Pages

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N-Channel MOS FET 100 V, 80 A, 5.5 m

文件：88.42 Kbytes 页数：7 Pages

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N-Channel Mosfet 100 V, 80 A, 5.5 MΩ

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • High speed switching\n• Low drive current\n• Low on-resistance RDS(on) = 4.4 mΩ typ. (at VGS = 10 V)\n• Package TO-220FPA\n• Quality Grade : Standard\n文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档 2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日RJK1001DP;

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Power MOSFETs

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