| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
WidebandIFReceiverSubsystem | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
WidebandIFReceiverSubsystem | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
WidebandIFReceiverSubsystem | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
WidebandIFReceiverSubsystem | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
WidebandIFReceiverSubsystem | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
WidebandIFReceiverSubsystem | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
SILICONDIOXIDEPASSIVATED •IN6677AVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERCHIPS •SILICONDIOXIDEPASSIVATED •COMPATIBLEWITHALLWIREBONDINGANDDIEATTACHTECHNIQUES,WITHTHEEXCEPTIONOFSOLDERREFLOW | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS •1N6677UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS •1N6677UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
30VN-ChannelLogicLevelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedfor“lowside”synchronousrectifieroperation,providinganextremelylowRDS(O | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VN-ChannelPowerTrenchSyncFET? GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP/B6676SincludesanintegratedSchottky | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
30VN-ChannelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed.extremelylowRDS(ON | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VN-ChannelPowerTrenchMOSFET GeneralDescription TheFDS6676SisdesignedtoreplaceaDPAKMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676SincludesanintegratedSchottkydiodeusing | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFET??Single,P-Channel,POWERTRENCH | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Fairchild |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
功率开关 （PSW）
- 封装形式：
直插封装
- 极限工作电压：
- 最大电流允许值：
15A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
- 最大耗散功率：
175W
- 放大倍数：
- 图片代号：
B-70
- vtest：
0
- htest：
999900
- atest：
15
- wtest：
175
详细参数
- 型号：
RJH6676
- 制造商：
Harris Corporation
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RCA |
2039 |
询价 | |||||
HAR |
23+ |
RJH6676 |
13528 |
振宏微原装正品,假一罚百 |
询价 | ||
ELNA |
22+ |
DIP |
1000000 |
专营插件.贴片 电解电容 全新原装现货 |
询价 | ||
ELNAAMERICAINC |
24+25+/26+27+ |
DIP-2.直插 |
96500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ELNA |
15+ROHS |
DIP |
72800 |
一级质量专业优势长期供应 |
询价 | ||
ELNA |
DIP |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
ELN |
1535+ |
5000 |
询价 | ||||
ELNA |
19+ |
SMD |
2400 |
询价 | |||
ELNA |
2023+ |
SMD |
5000 |
安罗世纪电子只做原装正品货 |
询价 | ||
ELNA |
12000 |
全新原装现货 样品可售 |
询价 |
