RN1309

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching,InverterCircuit,InterfaceCircuit andDriverCircuitApplications •Withbuilt-inbiasresistors. •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN2307toRN2309

RN1309(TE85L,F)

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.1A USM

Toshiba Semiconductor and Storage

RN1309,LF

Package：SC-70，SOT-323；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.1A USM

Toshiba Semiconductor and Storage

RN1309,LXHF

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：AUTO AEC-Q SINGLE NPN , R1=47KOH

Toshiba Semiconductor and Storage

RSZ-1309

1WattSMDMiniatureIsolatedSingleOutput

RSZ-1309HP

1WattSMDMiniatureIsolatedSingleOutput

SIR1309DP

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®GenIVp-channelpowerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Adapterswitch •Loadswitch •Motordrivecontrol •Batterymanagement •Motordrivecontrol

SMC1309

LowOnResistance(500mTYP)

Features LowOnResistance(500mTYP) LowOutputCapacitance(18pFTYP@25V) LowOutputLeakage(1nAMAX@80V) 750mAMaximumContinuousLoadCurrent 2APulsedCurrent(100mSPeriod@10%DC) IsolationVoltage(500VRMS) 1FormCwithBreakBeforeMakeSwitching LongL

SMJ1309

LowOnResistance(500mTYP)

Features LowOnResistance(500mTYP) LowOutputCapacitance(18pFTYP@25V) LowOutputLeakage(1nAMAX@80V) 750mAMaximumContinuousLoadCurrent IsolationVoltage(500VRMS) 2FormCwithBreakBeforeMakeSwitching LongLife/HighReliability RoHS/Pb-Free/REACH

SSD1309

OLEDDriverController

PassiveMatrixOLEDDriverController SolomonSystechcontinuestobethemarketleaderofthePassiveMatrixOLED(“PMOLED”)displayIC,witha competitiveedgeinsmallsizemobiledisplayapplications.BesidesprovidingafullrangeofPMOLEDdriverIC fromicon,monoandgrayscaletofull