Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2001\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 50 V ;

Toshiba

东芝

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：253.01 Kbytes 页数：6 Pages

TOSHIBA

东芝

NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

Features • Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc. • High gain and low noise. MSG = 25 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz MSG = 22 dB typ., NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ., N

文件：314.56 Kbytes 页数：17 Pages

RENESAS

瑞萨

NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

Features • Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc. • High gain and low noise. MSG = 25 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz MSG = 22 dB typ., NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ., N

文件：314.56 Kbytes 页数：17 Pages

RENESAS

瑞萨

SiGe MMIC High Frequency Low Noise Amplifier

文件：274.72 Kbytes 页数：9 Pages

RENESAS

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