RN1303

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching,InverterCircuit,InterfaceCircuit andDriverCircuitApplications ●Withbuilt-inbiasresistors. ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN2301toRN2306

RN1303

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1303(TE85L,F)

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.1A USM

Toshiba Semiconductor and Storage

RN1303,LF

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.1A USM

Toshiba Semiconductor and Storage

RN1303,LXHF

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：AUTO AEC-Q TR NPN BRT, Q1BSR=22K

Toshiba Semiconductor and Storage

RSZ-1303

1WattSMDMiniatureIsolatedSingleOutput

RSZ-1303HP

1WattSMDMiniatureIsolatedSingleOutput

SHF1303

HYPERFASTRECOVERYRECTIFIER200-600VOLTS

Features: ●PIVTO600VOLTS ●HYPERFASTRECOVERY40NSECMAX ●VOIDLESSCONSTRUCTION ●FORHIGHEFFICIENCYAPPLICATIONS ●HERMETICALLYSEALED ●LOWFORWARDDROP1.35VOLTS ●LOWLEAKAGECURRENT10μA ●REPLACEUNITRODEUES1304SERIESWHEREFASTERtrrISREQUITED

SI1303DL

P-Channel2.5-V(G-S)MOSFET

P-Channel2.5-V(G-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •2.5VRated •ComplianttoRoHSDirective2002/95/EC

SI1303DL

P-Channel2.5-V(G-S)MOSFET