丝印：QA；Package：SOT-346；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC (max) = 800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2401~RN2406

文件：322.45 Kbytes 页数：8 Pages

TOSHIBA

东芝

丝印：QA；Package：SOT-346；Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：547.59 Kbytes 页数：8 Pages

TOSHIBA

东芝

Bias resistor built-in transistor (BRT)

Feature：High current\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2421\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 0.8 A \nCollector-emitter voltage VCEO 50 V ;

Toshiba

东芝

Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：547.59 Kbytes 页数：8 Pages

TOSHIBA

东芝

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V 0.8A SMINI

Toshiba Semiconductor and Storage