RJH60F5DPQ-A0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RJH60F5DPQ-A0-T0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RJH60F5DPQ-A0

600 V - 40 A - IGBT High Speed Power Switching

RJH60F5DPQ-A0_15

600 V - 40 A - IGBT High Speed Power Switching

RJH60F5DPQ-A0#T0

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 260.4W TO247A

Renesas Electronics America Inc

RJH60F5

SiliconNChannelIGBTHighSpeedPowerSwitching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RJH60F5

600V-40A-IGBTHighSpeedPowerSwitching

RJH60F5DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

RJH60F5DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

Features •Highspeedswitching •Lowon-statevoltage •Fastrecoverydiode

RJP60F5DPK

600V-40A-IGBTHighSpeedPowerSwitching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) Highspeedswitching tf=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5,Ta=25°C,inductiveload)