High Capacitance

文件：733.99 Kbytes 页数：2 Pages

nichicon

尼吉康

丝印：RFs；Package：SOT-23；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：78.35 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：RFs；Package：SOT-416；NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

文件：70.57 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：RFs；Package：SOT-323；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads • Qualification report

文件：79.53 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：RFs；Package：SOT-363；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package • For orientation in reel see package information below • Ea

文件：60.19 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：RFs；Package：SOT-23；NPN Silicon RF Transistor

文件：133.44 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：RFs；Package：SOT-23；Low Noise Silicon Bipolar RF Transistor

文件：619.16 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：RFs；Package：SOT-323；Low Noise Silicon Bipolar RF Transistor

文件：672.64 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：RFs；Package：SOT-323；NPN Silicon RF Transistor

文件：510.37 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：RFs；Package：SOT-363；NPN Silicon RF Transistor

文件：127.17 Kbytes 页数：6 Pages

Infineon

英飞凌