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首页 >RFL>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
RFL1N12L	文件：31 Kbytes Page：4 Pages	1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a 文件：31 Kbytes 页数：4 Pages	INTERSIL	INTERSIL
RFL1N15	文件：43.23 Kbytes Page：5 Pages	1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件：43.23 Kbytes 页数：5 Pages	INTERSIL	INTERSIL
RFL1N15L	文件：31 Kbytes Page：4 Pages	1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a 文件：31 Kbytes 页数：4 Pages	INTERSIL	INTERSIL
RFL1N18	文件：96.15 Kbytes Page：2 Pages	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive 文件：96.15 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFL1N18	文件：43.36 Kbytes Page：5 Pages	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件：43.36 Kbytes 页数：5 Pages	INTERSIL	INTERSIL
RFL1N18L	文件：92.71 Kbytes Page：2 Pages	N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers. 文件：92.71 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFL1N20	文件：43.36 Kbytes Page：5 Pages	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件：43.36 Kbytes 页数：5 Pages	INTERSIL	INTERSIL
RFL1N20	文件：96.15 Kbytes Page：2 Pages	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive 文件：96.15 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFL1N20L	文件：92.71 Kbytes Page：2 Pages	N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers. 文件：92.71 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFL1P08	文件：90.53 Kbytes Page：2 Pages	1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件：90.53 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI

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技术参数

Tolerance：
+/-20%
Voltage–Rated：
160
Dielectric：
–
OperatingTemperature：
-40 ~ 105 °C (see datasheet)
Package/Case：
Radial Can
Applications：
Electronic Ballast
MountingType：
Through Hole
Size/Dimension：
Diameter
Height–Seated(Max)：
–
Thickness(Max)：
–
LeadSpacing：
(see datasheet)
LeadStyle：
Radial Leaded
Features：
High R.C.
LoadLife：
8000 ~ 10000 Hours @ 105 °C
Series：
RFL
Packaging：
Tape and Reel / Ammo
PartStatus：
Active

供应商	型号	品牌	批号	封装	库存	备注	价格
芯有半导体（深圳）有限公司	RFL6000-CD90-V2930-1	QUALCOMM	05/06+	BGA	14300	全新原装100真实现货供应	询价
深圳市一线半导体有限公司	RFLV-HJBITR	STMicroelectronics	24+	QFP	5000	公司存货	询价
深圳市毅创腾电子科技有限公司	RFL6000	QULACOMM	23+	QFN	350	专营高频管模块,全新原装!	询价
齐创科技(上海,北京,青岛)有限公司	RFL6200	QUALCOMM	23+	QFN	5000	原装正品,假一罚十	询价
深圳市欧立现代科技有限公司	RFL2N05L	N/A	24+		6868	原装现货,可开13%税票	询价
深圳市凌旭科技有限公司	RFLPF10051G8DM5T51	WALSIN	2016+	SMD	3500	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市鹏和科技有限公司	RFLPF1608060A0T	华新	24+	0603	5000	全现原装公司现货	询价
深圳市卓越微芯电子有限公司	RFL6100	QUALCOMM	25+	BGA	4100	百分百原装正品真实公司现货库存本公司只做原装可	询价
上海专毅电子科技有限公司	RFLV-HJBITR	STMicroelectronics	17+	QFP	9800	只做全新进口原装,现货库存	询价
上海鑫科润电子科技有限公司	RFL6000	QUALCOMM	07+	QFN	2130	原装现货海量库存欢迎咨询	询价

更多RFL供应商更新时间2026-1-27 17:23:00

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