Aluminum Electrolytic Capacitors

文件：295.73 Kbytes 页数：2 Pages

MERITEK

RFL100 Wireless Data Logger for continuous monitoring systems

Features Industry-leading measurement precision Interchangeable high-accuracy probes for T, RH, and CO2 30-day memory buffer Typical battery life of 18 months in RH and T measurement Uses standard alkaline batteries Probe calibrations are traceable to SI units through national metrology

文件：677.12 Kbytes 页数：5 Pages

VAISALA

维萨拉

N-Channel, Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件：148.22 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件：30.55 Kbytes 页数：4 Pages

INTERSIL

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers.

文件：92.71 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件：96.15 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件：30.55 Kbytes 页数：4 Pages

INTERSIL

N-Channel, Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

文件：148.22 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a

文件：29.9 Kbytes 页数：5 Pages

INTERSIL

1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：43.23 Kbytes 页数：5 Pages

INTERSIL