RFL1N15L中文资料Intersil数据手册PDF规格书

描述 Description

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

Formerly developmental type TA09528.

特性 Features

• 1A, 120V and 150V

• rDS(ON) = 1.900Ω