Low VF - High-Speed Switching Diode

Diffused Junction Silicon Diode Features • High breakdown voltage (VRRM=600V). • Fast reverse recovery time. • Low noise at the time of reverse recovery. • High reliability. • Easy to be mounted, good heat dissipation.

文件：236.44 Kbytes 页数：3 Pages

SANYO

三洋

Low VF - High-Speed Switching Diode

ONSEMI

安森美半导体

Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode

Diffused Junction Silicon Diode Features • High breakdown voltage (VRRM=600V). • Fast reverse recovery time. • Low noise at the time of reverse recovery. • Low forward voltage (VF max=1.5V). • Halogen free compliance.

文件：220.31 Kbytes 页数：3 Pages

SANYO

三洋

Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA

Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.5V) • Halogen free compliance

文件：371.18 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA

Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.5V) • Halogen free compliance

文件：371.18 Kbytes 页数：7 Pages

ONSEMI

安森美半导体