丝印：R7；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

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丝印：R7；Package：TO-236AB；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

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丝印：R7；Package：SOT323；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 3. Applications • Gene

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丝印：R7；Package：SC-70；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 • Qualified according to

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丝印：R7；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1µF to 4.7µF with an ESR of up to 200mΩ. Features •

文件：558.84 Kbytes 页数：11 Pages

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丝印：R7；Package：S-MINI；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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丝印：R7；Package：Pw-Mini；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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丝印：R7；Package：UFM；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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东芝

丝印：R7；Package：TSSOP5；45 V, 100 mA NPN/NPN matched double transistor

1. General description NPN/NPN matched double transistor in a very small SOT353 (SC-88A) Surface-Mounted Device (SMD) plastic package. The transistors in the SOT353 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.95 complement: PMP4501G PNP/PNP complement: PMP5201G 2. Features an

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丝印：R7；Package：SOT416；N-channel TrenchMOS ultra low level FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits  Low threshold voltage  Surface mounted package  Low on-state resistance  Footprint 63 small

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