丝印：R7；Package：SOT416；N-channel TrenchMOS ultra low level FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits  Low threshold voltage  Surface mounted package  Low on-state resistance  Footprint 63 small

文件：482.99 Kbytes 页数：14 Pages

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N-channel mTrenchMOS ultra low level FET

文件：90.18 Kbytes 页数：12 Pages

PHI

PHI

N-channel TrenchMOS ultra low level FET

N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

Nexperia

安世

20 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. • Low threshold voltage • Leadless ultra small package; 0.63 x 0.33 x 0.25 mm • Trench MOSFET technology • Low profile (0.25 mm

文件：279.28 Kbytes 页数：14 Pages

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20 V, P-channel Trench MOSFET

description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features • Low threshold voltage • Leadless ultra small package 0.63 x 0.33 x 0.25 mm • Trench MOSFET technology

文件：278.15 Kbytes 页数：14 Pages

NEXPERIA

安世

20 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. • Low threshold voltage • Leadless ultra small package; 0.63 x 0.33 x 0.25 mm • Trench MOSFET technology • Low profile (0.25 mm

文件：279.28 Kbytes 页数：14 Pages

NEXPERIA

安世