丝印：R7；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

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安世安世半导体(中国)有限公司

丝印：R7；Package：TO-236AB；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：323.9 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：R7；Package：SOT323；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 3. Applications • Gene

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：R7；Package：SC-70；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 • Qualified according to

文件：233.91 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：R7；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1µF to 4.7µF with an ESR of up to 200mΩ. Features •

文件：558.84 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：R7；Package：S-MINI；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：R7；Package：Pw-Mini；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：R7；Package：UFM；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：R7；Package：TSSOP5；45 V, 100 mA NPN/NPN matched double transistor

1. General description NPN/NPN matched double transistor in a very small SOT353 (SC-88A) Surface-Mounted Device (SMD) plastic package. The transistors in the SOT353 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.95 complement: PMP4501G PNP/PNP complement: PMP5201G 2. Features an

文件：246.21 Kbytes 页数：10 Pages

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安世安世半导体(中国)有限公司

丝印：R7；Package：SOT416；N-channel TrenchMOS ultra low level FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits  Low threshold voltage  Surface mounted package  Low on-state resistance  Footprint 63 small

文件：482.99 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司