丝印：R7；Package：UFM；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

文件：185.41 Kbytes 页数：7 Pages

TOSHIBA

东芝

Radio-frequency SiGe Heterojunction Bipolar Transistor

Application Scope：VHF/UHF band low noise, low distortion amplifier\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC 0.1 A \nCollector power dissipation (mounted on board) PC 900 mW \nJunction temperature Tj 150 ℃ \nCollector-emitter voltage VCEO 5.3 V ;

Toshiba

东芝

Package：3-SMD，扁平引线；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 5.3V 11.2GHZ UFM

Toshiba Semiconductor and Storage