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R6004JND3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.43Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:299.24 Kbytes 页数:2 Pages

ISC

无锡固电

R6004JNJ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.43Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:349.48 Kbytes 页数:2 Pages

ISC

无锡固电

R6004JNX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.43Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:319 Kbytes 页数:2 Pages

ISC

无锡固电

R6004KND

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.98Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:299.53 Kbytes 页数:2 Pages

ISC

无锡固电

R6004PND

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:299.58 Kbytes 页数:2 Pages

ISC

无锡固电

R6004RND3

丝印:R6004RND3;Package:TO-252;Nch 600V 4A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching

文件:2.35152 Mbytes 页数:14 Pages

ROHM

罗姆

R6006AND

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:298.46 Kbytes 页数:2 Pages

ISC

无锡固电

R6006ANX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:318.51 Kbytes 页数:2 Pages

ISC

无锡固电

R6006JND3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.94Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:299.93 Kbytes 页数:2 Pages

ISC

无锡固电

R6006JNJ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.94Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:350.18 Kbytes 页数:2 Pages

ISC

无锡固电

晶体管资料

  • 型号:

    R60

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-P+R

  • 性质:

    开关管 (SW)

  • 封装形式:

    贴片封装

  • 极限工作电压:

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    KSR2110,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-15

  • vtest:

    0

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0

技术参数

  • IF(A):

    0.2

  • VRRM(V):

    6000

  • IFSM(A):

    30

  • VF(V):

    5

  • @IVA(A):

    0.2

  • IR (μA)TA=25℃:

    5

  • TJ(℃):

    /

供应商型号品牌批号封装库存备注价格
ROHM
24+
TO220F
65200
一级代理/放心采购
询价
ROHM
2025+
SOT263
4365
全新原厂原装产品、公司现货销售
询价
JST Sales America Inc.
23+
原厂封装
30
只做原装只有原装现货实报
询价
NIDEC
两年内
NA
53
实单价格可谈
询价
NK/南科功率
2025+
TO-252
986966
国产
询价
ROHM/罗姆
2025+
TO252
2500
询价
KEMET(基美)
25+
-
11528
样件支持,可原厂排单订货!
询价
KEMET
23+
NA
9000
原装正品假一罚百!可开增票!
询价
ROHM/罗姆
25+
TO-247
30000
全新原装现货 价格优势
询价
ROHM
2023+
SMD
20
安罗世纪电子只做原装正品货
询价
更多R60供应商 更新时间2026-1-17 10:59:00