| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Silicon Schottky Barrier Diode for Rectifying Features Low reverse current and suitable for high efficiency rectifying. Ultra small Resin Package (TURP-FM) is suitable for compact and high-density surface mount design. 文件:190.29 Kbytes 页数:6 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon Schottky Barrier Diode for Rectifying Features Low reverse current and suitable for high efficiency rectifying. Ultra small Resin Package (TURP-FM) is suitable for compact and high-density surface mount design. 文件:190.76 Kbytes 页数:6 Pages | RENESAS 瑞萨 | RENESAS | ||
500V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.22 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter • Quality grade: Standard 文件:248.89 Kbytes 页数:8 Pages | RENESAS 瑞萨 | RENESAS | ||
INTELLIGENT POWER DEVICE 1.1 Description RAA290003 is designed for 2Wheeler Flasher driver with double frequency flashing in low load current condition. 1.2 Features - High side driver - Low on-state resistance - Small package; TO252-3 - Short circuit protection - Over temperature protection with current limitatio 文件:572.64 Kbytes 页数:19 Pages | RENESAS 瑞萨 | RENESAS | ||
40V – 160A – N-channel Power MOS FET Description The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.25 m MAX. ( VGS = 10 V, ID = 80A ) • Low input capacitance Ciss = 8800pF TYP. ( VDS = 25 V ) • Designed for a 文件:423.39 Kbytes 页数:8 Pages | RENESAS 瑞萨 | RENESAS | ||
650V - 50A - IGBT Features Trench gate and thin wafer technology (G8H series) Built in fast recovery diode in one package Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Quality grade: Standard High speed switching Non-specification for shor 文件:172.96 Kbytes 页数:12 Pages | RENESAS 瑞萨 | RENESAS | ||
40V - 35A N-Channel Power MOSFET Features Low on-state resistance RDS(on) = 1.2 m typ. (at VGS = 10 V, ID = 18 A) Current Sensing Surface mount package Quality grade: Standard 文件:236.32 Kbytes 页数:8 Pages | RENESAS 瑞萨 | RENESAS | ||
VOLTAGE REGULATOR 文件:387.88 Kbytes 页数:10 Pages | ETL 亚历电子 | ETL | ||
VOLTAGE REGULATOR 文件:387.88 Kbytes 页数:10 Pages | UTC 友顺 | UTC | ||
VOLTAGE REGULATOR 文件:387.88 Kbytes 页数:10 Pages | UTC 友顺 | UTC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
伍尔特 |
2018 |
Reel |
18000 |
原厂优势渠道,可订货,交期快,优势出货 |
询价 | ||
WURTH |
25+ |
电感器 |
962 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
W/E |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
WE |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
WURTH/伍尔特 |
2016+ |
SMD |
76600 |
原装正品优势价格出售/高价回收此类产品 |
询价 | ||
WE |
17+ |
SMD |
1500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
WE |
2023+ |
11.3x11.0*8.9 |
48000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
W/E |
24+ |
NA/ |
1200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
Würth Elektronik |
25+ |
非标准 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
WURTH/伍尔特 |
24+ |
84000 |
只做原装进口现货 |
询价 |
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